A new double-line waveguide architecture for photonic applications using fs laser writing in Nd3+ doped GeO2-PbO glasses

dc.contributor.authorBORDON, CAMILA D.S.pt_BR
dc.contributor.authorDIPOLD, JESSICApt_BR
dc.contributor.authorFREITAS, ANDERSON Z.pt_BR
dc.contributor.authorWETTER, NIKLAUS U.pt_BR
dc.contributor.authorROSSI, WAGNER dept_BR
dc.contributor.authorKASSAB, LUCIANA R.P.pt_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2022-08-10T18:37:35Z
dc.date.available2022-08-10T18:37:35Z
dc.date.issued2022pt_BR
dc.description.abstractA new double-line waveguide architecture produced in Nd3+ doped GeO2-PbO glasses is presented for photonic applications. The waveguides are written directly into Nd3+ doped GeO2-PbO glasses using a Ti:Sapphire femtosecond (fs) laser, operating at 800 nm, delivering 30 fs pulses at 10 kHz repetition rate and writing speed of 0.5 mm/s. Two parallel lines form a dual-waveguide each line being a result of either 4 or 8 superimposed lines. Results of propagation losses, M2 beam quality factor at 632 and 1064 nm, refractive index change, and relative gain at the signal wavelength (1064 nm) are presented. Structural changes, due to laser writing process were investigated by Raman spectroscopy. The observed near-field pattern image showed good waveguiding quality, consisting of a single, circular lobe. X,y-symmetrical guiding for both waveguides was observed. The relative gain reached 4.5 and 6.0 dB/cm for 4 and 8 superimposed lines, respectively, for 420 mW of 808 nm pumping. Propagation losses were 0.89 and 0.44 dB/cm, for 4 and 8 superimposed lines, respectively, leading to positive internal gain of 3.6 and 5.56 dB/cm. The results obtained in the present work demonstrate that this new double line architecture for Nd3+ doped GeO2-PbO glasses is promising for the fabrication of integrated amplifiers, lossless components and lasers.pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDFAPESP: 19/06334-4; 16/02326-9; 17/10765-5; 13/26113-6; 18/19240-5; 17/50332-0pt_BR
dc.description.sponsorshipIDCNPq: INCT 465.763/2014; 302532/2019-6; SISFOTON-MCTI 440228/2021-2pt_BR
dc.format.extent1-6pt_BR
dc.identifier.citationBORDON, CAMILA D.S.; DIPOLD, JESSICA; FREITAS, ANDERSON Z.; WETTER, NIKLAUS U.; ROSSI, WAGNER de; KASSAB, LUCIANA R.P. A new double-line waveguide architecture for photonic applications using fs laser writing in Nd3+ doped GeO2-PbO glasses. <b>Optical Materials</b>, v. 129, p. 1-6, 2022. DOI: <a href="https://dx.doi.org/10.1016/j.optmat.2022.112495">10.1016/j.optmat.2022.112495</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/33199.
dc.identifier.doi10.1016/j.optmat.2022.112495pt_BR
dc.identifier.issn0925-3467pt_BR
dc.identifier.orcid0000-0003-1371-7521pt_BR
dc.identifier.orcid0000-0002-9379-9530pt_BR
dc.identifier.orcid0000-0002-5018-9126pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-1371-7521
dc.identifier.orcidhttps://orcid.org/0000-0002-9379-9530
dc.identifier.orcidhttps://orcid.org/0000-0002-5018-9126
dc.identifier.percentilfi65.1pt_BR
dc.identifier.percentilfiCiteScore70pt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/33199
dc.identifier.vol129pt_BR
dc.relation.ispartofOptical Materialspt_BR
dc.rightsopenAccesspt_BR
dc.subjectgermanates
dc.subjectglass
dc.subjectlasers
dc.subjectwaveguides
dc.subjectoptical properties
dc.titleA new double-line waveguide architecture for photonic applications using fs laser writing in Nd3+ doped GeO2-PbO glassespt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorJESSICA DIPOLD
ipen.autorWAGNER DE ROSSI
ipen.autorNIKLAUS URSUS WETTER
ipen.autorANDERSON ZANARDI DE FREITAS
ipen.codigoautor15190
ipen.codigoautor73
ipen.codigoautor919
ipen.codigoautor880
ipen.contributor.ipenauthorJESSICA DIPOLD
ipen.contributor.ipenauthorWAGNER DE ROSSI
ipen.contributor.ipenauthorNIKLAUS URSUS WETTER
ipen.contributor.ipenauthorANDERSON ZANARDI DE FREITAS
ipen.date.recebimento22-08
ipen.identifier.fi3.9pt_BR
ipen.identifier.fiCiteScore5.6pt_BR
ipen.identifier.ipendoc28855pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi3.000 - 4.499
ipen.range.percentilfi50.00 - 74.99
ipen.type.genreArtigo
relation.isAuthorOfPublicatione269f6bf-703a-42ad-8f88-b8a90dbed0ea
relation.isAuthorOfPublication4e856bd3-cb24-4e4f-902b-58fd9ddf811f
relation.isAuthorOfPublication464db0c6-6072-480b-b899-81848893f7eb
relation.isAuthorOfPublicationa8d821f0-a0a4-4d52-b582-5c5d0afce8f5
relation.isAuthorOfPublication.latestForDiscoverye269f6bf-703a-42ad-8f88-b8a90dbed0ea
sigepi.autor.atividadeROSSI, WAGNER de:73:920:Npt_BR
sigepi.autor.atividadeWETTER, NIKLAUS U.:919:910:Npt_BR
sigepi.autor.atividadeFREITAS, ANDERSON Z.:880:920:Npt_BR
sigepi.autor.atividadeDIPOLD, JESSICA:15190:910:Npt_BR

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