Influence of gallium-based additives on microstructure and ionic conductivity of doped-lanthanum gallate

dc.contributor.authorREIS, S.L.pt_BR
dc.contributor.authorMUCCILLO, E.N.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoCONFERENCE ON ELECTRONIC AND ADVANCED MATERIALSpt_BR
dc.date.accessioned2019-10-08T18:47:17Z
dc.date.available2019-10-08T18:47:17Z
dc.date.eventoJanuary 17-19, 2018pt_BR
dc.description.abstractSr- and Mg-doped lanthanum gallate is a well known oxide-ion conductor with potential application in Solid Oxide Fuel Cells operating at intermediate temperatures (500-700oC). One of the main concerns on this solid electrolyte is related to impurity phases, frequently observed even in chemically synthesized powders, due to gallium loss during sintering. La0.9Sr0.1Ga0.8Mg0.2O3-d, LSGM, containing small amounts of Ga2O3 and Sr3Ga2O6 were prepared by solid state reaction, and the effects of the additives on microstructure and ionic conductivity were investigated after sintering at 1350oC. Gallium oxide addition promoted grain growth of LSGM and increased the fraction of the gallium-rich impurity phase. In contrast, strontium gallate addition favored reduction of the fraction of impurity phases. The intragrain conductivity of LSGM increases with gallium oxide addition, whereas strontium gallate improved both the intra- and the intergrain conductivities of LSGM.pt_BR
dc.event.siglaEAMpt_BR
dc.format.extent73-73pt_BR
dc.identifier.citationREIS, S.L.; MUCCILLO, E.N. Influence of gallium-based additives on microstructure and ionic conductivity of doped-lanthanum gallate. In: CONFERENCE ON ELECTRONIC AND ADVANCED MATERIALS, January 17-19, 2018, Orlando, Florida, USA. <b>Abstract...</b> Westerville, OH, USA: The American Ceramic Society, 2018. p. 73-73. Disponível em: http://repositorio.ipen.br/handle/123456789/30201.
dc.identifier.orcid0000-0001-9219-388Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-9219-388X
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30201
dc.localWesterville, OH, USApt_BR
dc.local.eventoOrlando, Florida, USApt_BR
dc.publisherThe American Ceramic Societypt_BR
dc.rightsopenAccesspt_BR
dc.titleInfluence of gallium-based additives on microstructure and ionic conductivity of doped-lanthanum gallatept_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorELIANA NAVARRO DOS SANTOS MUCCILLO
ipen.autorSHIRLEY LEITE DOS REIS
ipen.codigoautor1298
ipen.codigoautor3968
ipen.contributor.ipenauthorELIANA NAVARRO DOS SANTOS MUCCILLO
ipen.contributor.ipenauthorSHIRLEY LEITE DOS REIS
ipen.date.recebimento19-10
ipen.event.datapadronizada2018pt_BR
ipen.identifier.ipendoc25992pt_BR
ipen.notas.internasAbstractpt_BR
ipen.type.genreResumo
relation.isAuthorOfPublicationbc09f7ae-f25e-4f60-87a3-0c89989e8304
relation.isAuthorOfPublication37a8d93a-dd7a-4e10-aa00-eba2c03bebb6
relation.isAuthorOfPublication.latestForDiscovery37a8d93a-dd7a-4e10-aa00-eba2c03bebb6
sigepi.autor.atividadeMUCCILLO, E.N.:1298:720:Npt_BR
sigepi.autor.atividadeREIS, S.L.:3968:720:Spt_BR

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