Cd and In-doping in thin film SnO2

dc.contributor.authorSCHELL, JULIANA
dc.contributor.authorLUPASCU, DORU C.
dc.contributor.authorCARBONARI, ARTUR W.
dc.contributor.authorMANSANO, RONALDO D.
dc.contributor.authorFREITAS, RAFAEL S.
dc.contributor.authorGONCALVES, JOAO N.
dc.contributor.authorDANG, THIEN T.
dc.contributor.authorISOLDE COLLABORATION
dc.contributor.authorVIANDEN, REINER
dc.coverageInternacionalpt_BR
dc.date.accessioned2017-10-05T19:29:52Z
dc.date.available2017-10-05T19:29:52Z
dc.date.issued2017pt_BR
dc.description.abstractIn this paper, we investigate the effects of doping in the local structure of SnO2 by measuring the hyperfine interactions at impurity nuclei using the Time Differential Perturbed Gamma-Gamma Angular Correlation (TDPAC) method in addition to density functional theory simulations. The hyperfine field parameters have been probed as a function of the temperature in thin film samples. The experimental results reveal that Cd-117/In and In-111/Cd are incorporated and stabilized in the SnO2 lattice replacing the cationic site. Significant differences in the electric field gradient were observed from TDPAC measurements with both the probe nuclei. Furthermore, the absence of strongly damped spectra further indicates that implanted Cd atoms (for Cd-117/In probe nuclei measurements) easily occupy regular substitutional Sn sites with good stability. The simulated value for the electric field gradient obtained with the first oxygen neighbor removed is closer to the experimental value observed for Cd-117, which also indicates this configuration as stable and present in the sample.pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDCNPq: 290102/2011-1pt_BR
dc.format.extent195303-1 - 195303-5pt_BR
dc.identifier.citationSCHELL, JULIANA; LUPASCU, DORU C.; CARBONARI, ARTUR W.; MANSANO, RONALDO D.; FREITAS, RAFAEL S.; GONCALVES, JOAO N.; DANG, THIEN T.; ISOLDE COLLABORATION; VIANDEN, REINER. Cd and In-doping in thin film SnO2. <b>Journal of Applied Physics</b>, v. 121, n. 19, p. 195303-1 - 195303-5, 2017. DOI: <a href="https://dx.doi.org/10.1063/1.4983669">10.1063/1.4983669</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/27852.
dc.identifier.doi10.1063/1.4983669pt_BR
dc.identifier.fasciculo19pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4499-5949
dc.identifier.percentilfi60.62en
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/27852
dc.identifier.vol121pt_BR
dc.relation.ispartofJournal of Applied Physicspt_BR
dc.rightsopenAccesspt_BR
dc.subjectdifferential pac
dc.subjectangular correlation
dc.subjectthin films
dc.subjecttin oxides
dc.subjectcadmium
dc.subjectindium
dc.subjectsemiconductor materials
dc.titleCd and In-doping in thin film SnO2pt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorARTUR WILSON CARBONARI
ipen.codigoautor1437
ipen.contributor.ipenauthorARTUR WILSON CARBONARI
ipen.date.recebimento17-10pt_BR
ipen.identifier.fi2.176pt_BR
ipen.identifier.ipendoc23200pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi1.500 - 2.999
ipen.range.percentilfi50.00 - 74.99
ipen.type.genreArtigo
relation.isAuthorOfPublication8f236231-e73c-4182-a596-d83e49cd0404
relation.isAuthorOfPublication.latestForDiscovery8f236231-e73c-4182-a596-d83e49cd0404
sigepi.autor.atividadeCARBONARI, ARTUR W.:1437:310:Npt_BR

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