Logarithmic contribution to the electrical resistivity in (Ru1-xIrx)Sr2GdCu2O8 compounds
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Physical Review, B
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A systematic study of magnetoresistance and dc magnetization was conducted in polycrystalline (Ru1-x Irx) Sr2 GdCu2 O8 [(Ru,Ir)-1212] compounds, for 0≤x≤0.15. We found that a deviation from linearity in the normal-state electrical resistivity (ρ) curves for temperatures below the magnetic transition temperature TM <130 K can be properly described by a logarithmic term. The prefactor C (x,H) of this anomalous lnT contribution to ρ (T) increases linearly with the Ir concentration, and diminishes rapidly with increasing applied magnetic field up to H ≈4 T, merging with the C (0,H) curve at higher magnetic fields. Correlation with magnetic susceptibility measurements supports a scenario of local perturbations in the orientation of Ru moments induced in the neighborhood of the Ir ions, therefore acting as scattering centers. The linear dependence of the prefactor C (x,H=0) and the superconducting transition temperature TSC on x points to a common source for the resistivity anomaly and the reduction in TSC, suggesting that the CuO2 and RuO2 layers are not decoupled.
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GARCIA, S.; ANDRADE, S.; JARDIM, R.F.; FONSECA, F.C.; TORIKACHVILI, M.S.; LACERDA, A.H. Logarithmic contribution to the electrical resistivity in (Ru1-xIrx)Sr2GdCu2O8 compounds. Physical Review, B, v. 80, n. 13, p. 134529-1 - 134529-6, 2009. DOI: 10.1103/PhysRevB.80.134520. Disponível em: http://repositorio.ipen.br/handle/123456789/8079. Acesso em: 27 Mar 2026.
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