Numerical simulation on modified chemical vapor deposition (MCVD) thermal flow field
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2022
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SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE
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This study determines the hydrodynamic and thermal properties of flow field for modified chemical vapor deposition (MCVD) process by means of a computational fluid dynamics (CFD) steady-state simulation. A three dimensional hexahedral mesh and the finite volume method were used to solve the momentum, continuity, energy and chemical species equations on a domain represented by a rotating tube of 24mm diameter, 45 rpm and a flow regime of Re=900. User defined functions were used on STAR-CCM+ code to modeling the SiCl 4 oxidation, which occurred in the zones with the highest temperatures (1800K) determined by the torch heating profile. The numerical results were compared with a reference study and a good agreement was obtained.
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SILVA, RUBENS C. da; MORAIS, PAULO J.D. de; CARVALHO, ANDRE; ROSSI, WAGNER de; MOTTA, CLAUDIO C. Numerical simulation on modified chemical vapor deposition (MCVD) thermal flow field. In: SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, October 13-15, 2022, Recife, PE. Proceedings... Piscataway, NJ, USA: IEEE, 2022. DOI: 10.1109/SBFotonIOPC54450.2022.9993108. Disponível em: http://repositorio.ipen.br/handle/123456789/33663. Acesso em: 20 Mar 2026.
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