Numerical simulation on modified chemical vapor deposition (MCVD) thermal flow field

Abstract

This study determines the hydrodynamic and thermal properties of flow field for modified chemical vapor deposition (MCVD) process by means of a computational fluid dynamics (CFD) steady-state simulation. A three dimensional hexahedral mesh and the finite volume method were used to solve the momentum, continuity, energy and chemical species equations on a domain represented by a rotating tube of 24mm diameter, 45 rpm and a flow regime of Re=900. User defined functions were used on STAR-CCM+ code to modeling the SiCl 4 oxidation, which occurred in the zones with the highest temperatures (1800K) determined by the torch heating profile. The numerical results were compared with a reference study and a good agreement was obtained.