Evaluation of impurities in the Brazilian solar grade silicon and LeTID investigations in p-type multi-Si

dc.contributor.advisorHumberto Gracher Riellapt_BR
dc.contributor.authorKNOB, DANIELpt_BR
dc.coverageNacionalpt_BR
dc.date.accessioned2019-10-04T13:39:28Z
dc.date.available2019-10-04T13:39:28Z
dc.date.issued2019
dc.description.abstractThe cost reductions and the environmental benefits aligned with global concerns about climate change have made solar photovoltaic technology the most installed source of energy in the power sector worldwide. Brazil has the largest know reserves of silicon in the world. Therefore, there is a huge potential for developing a national technology for purifying and manufacturing silicon wafers within an increasingly competitive and efficient photovoltaic industry. The IPEN initiative of investigating the production of metallic silicon and metallurgical route purification required a characterization of samples in different stages of production from quartz to wafer and understanding the characterization methods for silicon wafers taking into account the main defect mechanisms such as light-induced degradation. Metalic silicon is produced in IPEN via magnesiothermal reduction through acid leaching to form a metallurgical grade silicon with relatively low impurities. One more acid leaching step resulted in a specific ultra-metallurgical grade silicon. The same acid leaching was processed in a commercially available Brazilian-made metallurgical grade silicon produced via carbothermal reduction. All samples impurities was measured by ICP-OES. The result is a material with ultra-metallurgical grade silicon content with excess of B and P. While wafer characterization was studied, an extensive investigation was taken on LeTID, which causes remain unknown, at Institute for Energy Technology, Norway. Neighboring high performance mc-Si p-type wafers were tested in different firing process conditions. The effects was investigated in terms of defects activation and a corresponding lifetime degradation and recovery at illuminated annealing. A sample with almost fully suppressed LeTID is shown. A new method have been proposed to separate Boron Oxygen-Light Induced Degradation effects of LeTID, enabling to measure even where it was thought to be fully suppressed. New models for LeTID defect formation and suppression are proposed. Both silicon purification and light-induced degradation characterization in mc-Si studies shows a wide range of research on new production routes that may require tailored processes of crystallization and solar cell manufacturing such as gettering and firing.pt_BR
dc.description.notasgeraisTese (Doutorado em Tecnologia Nuclear)pt_BR
dc.description.notasteseIPEN/Tpt_BR
dc.description.teseinstituicaoInstituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SPpt_BR
dc.format.extent136pt_BR
dc.identifier.citationKNOB, DANIEL. <b>Evaluation of impurities in the Brazilian solar grade silicon and LeTID investigations in p-type multi-Si</b>. Orientador: Humberto Gracher Riella. 2019. 136 f. Tese (Doutorado em Tecnologia Nuclear) - Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP, São Paulo. DOI: <a href="https://dx.doi.org/10.11606/T.85.2019.tde-19092019-141733">10.11606/T.85.2019.tde-19092019-141733</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/30184.
dc.identifier.doi10.11606/T.85.2019.tde-19092019-141733
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30184
dc.localSão Paulopt_BR
dc.rightsopenAccesspt_BR
dc.subjectorganic silicon compounds
dc.subjectsilicon compounds
dc.subjectorganic solar cells
dc.subjectphotovoltaic cells
dc.subjectsolar reflectors
dc.subjectsolar architecture
dc.subjectsolar heating systems
dc.subjectlighting loads
dc.subjectimpurities
dc.subjectmicroanalysis
dc.subjectthermal degradation
dc.subjectenvironmental degradation
dc.subjectcomparative evaluations
dc.titleEvaluation of impurities in the Brazilian solar grade silicon and LeTID investigations in p-type multi-Sipt_BR
dc.title.alternativeAvaliação das impurezas do silício metálico grau solar brasileiro e investigações sobre LeTID no multi-Si do tipo-ppt_BR
dc.typeTesept_BR
dspace.entity.typePublication
ipen.autorDANIEL KNOB
ipen.codigoautor10290
ipen.contributor.ipenauthorDANIEL KNOB
ipen.date.recebimento19-10
ipen.identifier.ipendoc25975pt_BR
ipen.meioeletronicohttp://www.teses.usp.br/teses/disponiveis/85/85134/tde-19092019-141733/pt-br.phppt_BR
ipen.type.genreTese
relation.isAuthorOfPublication9d96ea1d-1ecc-48c8-8015-fd6815cd2b6a
relation.isAuthorOfPublication.latestForDiscovery9d96ea1d-1ecc-48c8-8015-fd6815cd2b6a
sigepi.autor.atividadeKNOB, DANIEL:10290:410:Spt_BR

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