Relation between OHsub (-) defect reorientation rates and the quenching of F center luminescence in alkali halides

Página do item simplificado
dc.contributor.authorGOMES, L.pt_BR
dc.contributor.authorLUTY, F.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoINTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING CRYSTALSpt_BR
dc.date.accessioned2014-11-19T11:12:01Zpt_BR
dc.date.accessioned2014-11-19T14:12:07Zpt_BR
dc.date.accessioned2015-04-01T12:42:12Z
dc.date.available2014-11-19T11:12:01Zpt_BR
dc.date.available2014-11-19T14:12:07Zpt_BR
dc.date.available2015-04-01T12:42:12Z
dc.date.evento1984pt_BR
dc.identifier.citationGOMES, L.; LUTY, F. Relation between OHsub (-) defect reorientation rates and the quenching of F center luminescence in alkali halides. In: INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING CRYSTALS, 1984, Salt Lake City, Utah, USA. <b>Abstract...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/20693.
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/20693pt_BR
dc.local.eventoSalt Lake City, Utah, USApt_BR
dc.subjectcrystal defectspt_BR
dc.subjectf centerspt_BR
dc.subjecthalidespt_BR
dc.subjectorientationpt_BR
dc.subjectquenchingpt_BR
dc.titleRelation between OHsub (-) defect reorientation rates and the quenching of F center luminescence in alkali halidespt_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorLAERCIO GOMES
ipen.codigoautor1190
ipen.contributor.ipenauthorLAERCIO GOMES
ipen.date.recebimento86-12pt_BR
ipen.event.datapadronizada1984pt_BR
ipen.identifier.ipendoc02390pt_BR
ipen.notas.internasAbstractpt_BR
ipen.observacoesarquivo não disponível no Repositóriopt_BR
ipen.type.genreResumo
relation.isAuthorOfPublication3682a9c8-52ea-4835-9e74-0f623e302d62
relation.isAuthorOfPublication.latestForDiscovery3682a9c8-52ea-4835-9e74-0f623e302d62
sigepi.autor.atividadeGOMES, L.:1190:-1:Spt_BR
sigepi.autor.atividadeLUTY, F.:-1:-1:Npt_BR

Coleções

Eventos - Resumos