Morphology of nanostructured thin films of ZnO fabricate from SILAR method

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dc.contributor.authorSERNA, MARILENE M.pt_BR
dc.contributor.authorGALEGO, EGUIBERTOpt_BR
dc.contributor.authorRAMANATHAN, LALGUDI V.pt_BR
dc.contributor.authorFARIA, RUBENS N.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoBRAZIL MRS MEETING, 16thpt_BR
dc.date.accessioned2020-05-27T13:52:17Z
dc.date.available2020-05-27T13:52:17Z
dc.date.eventoSeptember 10-14, 2017pt_BR
dc.description.abstractThe utilization of the ZnO in the nanotechnology is widely spread due to its superior properties, such as wide direct bang gap (~3.37eV), high exciton binding energy of 60 meV, non-toxicity and low cost [1]. The hexagonal crystalline structure allows obtaining a larger diversity morphologies and this allows its utilization in: UV lasers, piezoelectric crystal, chemical sensor, gas sensor, light emitting diode, photo detectors, and solar cells. One such morphology of ZnO thin film is the one-dimensional (1D) sub-micron rods or nanorods and nanowires, which has attracted interest due to a larger surface area and high aspect ratio. In the solar cell the ZnO has been utilized in the electrode for the dye-sensitized cell in substitution of TiO2. In this study, ZnO nanostructured thin films were prepared by successive ionic layer adsorption and reaction (SILAR) on SnO2-coated glass substrates [2]. In this procedure, the substrate is immersed in successive aqueous baths containing zinc nitrate hydrate and/or hexamethylenetetramine, hydrogen peroxide and triethanolamine. The pH solution was adjusted by addiction of ammonium hydroxide. At a low zinc nitrate concentration of 0.01M the surface is formed by individual nucleus. At a concentration of 0.02 M nanorod arrays were shown and this morphology is of special interest for solar cells application, but the deposition time used in this experiment was insufficient to promote the desired thickness. At a higher concentration of 0.03 M rice like branches morphology was observed but nanorods formation in the flowers was also present. The angular petals suggest that the growth was taken on polar face. For DSSCs applications the thin films prepared in 0.02 M solution was found to be the best choice.pt_BR
dc.event.siglaB-MRSpt_BR
dc.format.extent1260-1260pt_BR
dc.identifier.citationSERNA, MARILENE M.; GALEGO, EGUIBERTO; RAMANATHAN, LALGUDI V.; FARIA, RUBENS N. Morphology of nanostructured thin films of ZnO fabricate from SILAR method. In: BRAZIL MRS MEETING, 16th, September 10-14, 2017, Gramado, RS. <b>Abstract...</b> São Carlos, SP: Aptor Software, 2017. p. 1260-1260. Disponível em: http://repositorio.ipen.br/handle/123456789/31191.
dc.identifier.orcidhttps://orcid.org/0000-0003-4822-8840
dc.identifier.orcidhttps://orcid.org/0000-0001-6053-3907
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/31191
dc.localSão Carlos, SPpt_BR
dc.local.eventoGramado, RSpt_BR
dc.publisherAptor Softwarept_BR
dc.rightsopenAccesspt_BR
dc.titleMorphology of nanostructured thin films of ZnO fabricate from SILAR methodpt_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorRUBENS NUNES DE FARIA JUNIOR
ipen.autorLALGUDI VENKATARAMAN RAMANATHAN
ipen.autorEGUIBERTO GALEGO
ipen.autorMARILENE MORELLI SERNA
ipen.codigoautor227
ipen.codigoautor95
ipen.codigoautor640
ipen.codigoautor252
ipen.contributor.ipenauthorRUBENS NUNES DE FARIA JUNIOR
ipen.contributor.ipenauthorLALGUDI VENKATARAMAN RAMANATHAN
ipen.contributor.ipenauthorEGUIBERTO GALEGO
ipen.contributor.ipenauthorMARILENE MORELLI SERNA
ipen.date.recebimento20-05
ipen.event.datapadronizada2017pt_BR
ipen.identifier.ipendoc26970pt_BR
ipen.notas.internasAbstractpt_BR
ipen.type.genreResumo
relation.isAuthorOfPublication20cb7788-3957-4550-9e5c-cf7f5261eec4
relation.isAuthorOfPublication8e95d525-c559-413e-ac38-1e26a8fd67a3
relation.isAuthorOfPublicationc65f9b94-7593-4e3c-a8f7-67dca24ed1ea
relation.isAuthorOfPublicationdfce5aa7-5f15-441a-acd4-a1bdbe5b9804
relation.isAuthorOfPublication.latestForDiscoverydfce5aa7-5f15-441a-acd4-a1bdbe5b9804
sigepi.autor.atividadeFARIA, RUBENS N.:227:730:Npt_BR
sigepi.autor.atividadeRAMANATHAN, LALGUDI V.:95:730:Npt_BR
sigepi.autor.atividadeGALEGO, EGUIBERTO:640:-1:Npt_BR
sigepi.autor.atividadeSERNA, MARILENE M.:252:-1:Spt_BR
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