Thermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy
| dc.contributor.author | QUEIROZ, ALFREDO A.A.E. de | |
| dc.contributor.author | ANDRADE, MARCELO B. de | |
| dc.contributor.author | QUEIROZ, ALVARO A.A. de | |
| dc.coverage | Internacional | |
| dc.date.accessioned | 2026-02-12T18:55:57Z | |
| dc.date.available | 2026-02-12T18:55:57Z | |
| dc.date.issued | 2025 | |
| dc.description.abstract | Organic memristors (OMEMRs) based on biopolymeric matrices functionalized with silver nanoparticles (AgNPs) are emerging as promising candidates for next-generation non-volatile memory technologies, owing to their multilevel resistive switching behavior, scalability, and compatibility with solution-processable fabrication methods. In this study, AgNPs were coordinated with chondroitin sulfate (ChS) to produce Ag@ChS-based OMEMRs, which were fabricated via spin-coating and subjected to a comprehensive thermal stability assessment using temperature-resolved Raman spectroscopy over the 25°C–275°C range. The Raman spectra revealed a prominent vibrational mode at 76 cm−1, attributed to AgNP lattice dynamics, along with a distinct Ag–O stretching feature near 240 cm−1, indicative of coordination with carboxylate groups within the ChS matrix. A marked attenuation of sulfate-associated Raman bands was observed at approximately 175°C, signifying a critical degradation threshold associated with desulfation, interfacial breakdown, and irreversible loss of memristive functionality. These findings demonstrate that Raman spectroscopy provides a sensitive, non-destructive platform for probing thermally induced molecular transformations and diagnosing early-stage failure in biopolymer-based memristive systems. The insights gained herein offer valuable guidance for the rational design of thermally robust organic memory devices. | |
| dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
| dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description.sponsorshipID | CAPES: 88887.370250/2019-00 | |
| dc.description.sponsorshipID | CNPq: 316927/2023-6 | |
| dc.description.sponsorshipID | FAPESP: 13/03487-8; 24/09091-3 | |
| dc.format.extent | 169-180 | |
| dc.identifier.citation | QUEIROZ, ALFREDO A.A.E. de; ANDRADE, MARCELO B. de; QUEIROZ, ALVARO A.A. de. Thermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy. <b>Journal of Raman Spectroscopy</b>, v. 57, n. 1, p. 169-180, 2025. DOI: <a href="https://dx.doi.org/10.1002/jrs.70039">10.1002/jrs.70039</a>. Disponível em: https://repositorio.ipen.br/handle/123456789/49306. | |
| dc.identifier.doi | 10.1002/jrs.70039 | |
| dc.identifier.fasciculo | 1 | |
| dc.identifier.issn | 0377-0486 | |
| dc.identifier.percentilfi | 55.7 | |
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| dc.identifier.uri | https://repositorio.ipen.br/handle/123456789/49306 | |
| dc.identifier.vol | 57 | |
| dc.language.iso | eng | |
| dc.relation.ispartof | Journal of Raman Spectroscopy | |
| dc.rights | openAccess | |
| dc.title | Thermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy | |
| dc.type | Artigo de periódico | |
| dspace.entity.type | Publication | |
| ipen.autor | ÁLVARO ANTONIO ALENCAR DE QUEIROZ | |
| ipen.codigoautor | 7319 | |
| ipen.contributor.ipenauthor | ÁLVARO ANTONIO ALENCAR DE QUEIROZ | |
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| ipen.type.genre | Artigo | |
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