Thermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy

dc.contributor.authorQUEIROZ, ALFREDO A.A.E. de
dc.contributor.authorANDRADE, MARCELO B. de
dc.contributor.authorQUEIROZ, ALVARO A.A. de
dc.coverageInternacional
dc.date.accessioned2026-02-12T18:55:57Z
dc.date.available2026-02-12T18:55:57Z
dc.date.issued2025
dc.description.abstractOrganic memristors (OMEMRs) based on biopolymeric matrices functionalized with silver nanoparticles (AgNPs) are emerging as promising candidates for next-generation non-volatile memory technologies, owing to their multilevel resistive switching behavior, scalability, and compatibility with solution-processable fabrication methods. In this study, AgNPs were coordinated with chondroitin sulfate (ChS) to produce Ag@ChS-based OMEMRs, which were fabricated via spin-coating and subjected to a comprehensive thermal stability assessment using temperature-resolved Raman spectroscopy over the 25°C–275°C range. The Raman spectra revealed a prominent vibrational mode at 76 cm−1, attributed to AgNP lattice dynamics, along with a distinct Ag–O stretching feature near 240 cm−1, indicative of coordination with carboxylate groups within the ChS matrix. A marked attenuation of sulfate-associated Raman bands was observed at approximately 175°C, signifying a critical degradation threshold associated with desulfation, interfacial breakdown, and irreversible loss of memristive functionality. These findings demonstrate that Raman spectroscopy provides a sensitive, non-destructive platform for probing thermally induced molecular transformations and diagnosing early-stage failure in biopolymer-based memristive systems. The insights gained herein offer valuable guidance for the rational design of thermally robust organic memory devices.
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIDCAPES: 88887.370250/2019-00
dc.description.sponsorshipIDCNPq: 316927/2023-6
dc.description.sponsorshipIDFAPESP: 13/03487-8; 24/09091-3
dc.format.extent169-180
dc.identifier.citationQUEIROZ, ALFREDO A.A.E. de; ANDRADE, MARCELO B. de; QUEIROZ, ALVARO A.A. de. Thermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy. <b>Journal of Raman Spectroscopy</b>, v. 57, n. 1, p. 169-180, 2025. DOI: <a href="https://dx.doi.org/10.1002/jrs.70039">10.1002/jrs.70039</a>. Disponível em: https://repositorio.ipen.br/handle/123456789/49306.
dc.identifier.doi10.1002/jrs.70039
dc.identifier.fasciculo1
dc.identifier.issn0377-0486
dc.identifier.percentilfi55.7
dc.identifier.percentilfiCiteScore65.00
dc.identifier.urihttps://repositorio.ipen.br/handle/123456789/49306
dc.identifier.vol57
dc.language.isoeng
dc.relation.ispartofJournal of Raman Spectroscopy
dc.rightsopenAccess
dc.titleThermal degradation threshold in Ag@chondroitin sulfate memristors revealed by temperature-resolved raman spectroscopy
dc.typeArtigo de periódico
dspace.entity.typePublication
ipen.autorÁLVARO ANTONIO ALENCAR DE QUEIROZ
ipen.codigoautor7319
ipen.contributor.ipenauthorÁLVARO ANTONIO ALENCAR DE QUEIROZ
ipen.identifier.fi1.9
ipen.identifier.fiCiteScore5.6
ipen.identifier.ipendoc31390
ipen.identifier.iwosWoS
ipen.range.fi1.500 - 2.999
ipen.range.percentilfi50.00 - 74.99
ipen.type.genreArtigo
relation.isAuthorOfPublicatione7d5bfcd-02bd-4e2a-8b3a-b4a56eb4cdfa
relation.isAuthorOfPublication.latestForDiscoverye7d5bfcd-02bd-4e2a-8b3a-b4a56eb4cdfa
sigepi.autor.atividadeÁLVARO ANTONIO ALENCAR DE QUEIROZ:7319:-1:N

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