Temperature dependence of the electric field gradient at 181Ta in nanostructured HfO2 film

dc.contributor.authorCAVALCANTE, F.H.C.pt_BR
dc.contributor.authorCARBONARI, A.W.pt_BR
dc.contributor.authorSOARES, J.C.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoNTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS, 16th
dc.date.accessioned2014-07-15T13:38:24Zpt_BR
dc.date.accessioned2014-07-30T11:51:08Z
dc.date.available2014-07-15T13:38:24Zpt_BR
dc.date.available2014-07-30T11:51:08Z
dc.date.eventoAugust 24-29, 2008
dc.description.abstractThe hyperfine field at metal lattice sites in a nanostructured HfO2 thin film was studied by the Perturbed Angular Correlation (PAC) technique using 181Ta as probe nuclei. The thin oxide film was deposited by pulsed laser ablation on a silicon substrate kept at 673 K. The resulting film thickness was about 25 nm. The 181Ta isotopes are formed in Hf sites of the sample as disintegration product of radioactive 181Hf, which were produced by neutron activation of the very thin film by the reaction 180Hf(n,γ) 181Hf.. PAC measurements of the electric field gradient at the 181Ta probe sites .were performed with the thin film in the temperature range 295 – 1273 K in vacuum. Results showed that the film has a single crystalline structure and two different quadrupole frequencies could be observed corresponding to 181Ta at monoclinic structure and with oxygen vacancy in its neighborhood.
dc.identifier.citationCAVALCANTE, F.H.C.; CARBONARI, A.W.; SOARES, J.C. Temperature dependence of the electric field gradient at sup(181)Ta in nanostructured HfOsub(2) film. In: NTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS, 16th, August 24-29, 2008, Aracaju, SE. <b>Proceedings...</b> DOI: <a href="https://dx.doi.org/10.1088/1742-6596/249/1/012051">10.1088/1742-6596/249/1/012051</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/4562.
dc.identifier.doi10.1088/1742-6596/249/1/012051
dc.identifier.orcidhttps://orcid.org/0000-0002-4499-5949
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/4562pt_BR
dc.local.eventoAracaju, SE
dc.rightsclosedAccessen
dc.sourcePublicado em: Journal of Physics: Conference Series, v. 249, n. 1, p. 012051-1 – 012051-6, 2010
dc.subjecttemperature dependencept_BR
dc.subjectelectric fieldspt_BR
dc.subjecttantalum 181pt_BR
dc.subjectnanostructurespt_BR
dc.subjecthafnium oxidespt_BR
dc.subjectthin filmspt_BR
dc.subjectperturbed angular correlationpt_BR
dc.titleTemperature dependence of the electric field gradient at 181Ta in nanostructured HfO2 filmpt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorARTUR WILSON CARBONARI
ipen.autorFABIO HENRIQUE DE MORAES CAVALCANTE
ipen.codigoautor1437
ipen.codigoautor3083
ipen.contributor.ipenauthorARTUR WILSON CARBONARI
ipen.contributor.ipenauthorFABIO HENRIQUE DE MORAES CAVALCANTE
ipen.date.recebimento11-06pt_BR
ipen.event.datapadronizada2010
ipen.identifier.ipendoc16508pt_BR
ipen.notas.internasProceedings
ipen.type.genreArtigo
relation.isAuthorOfPublication8f236231-e73c-4182-a596-d83e49cd0404
relation.isAuthorOfPublication7488b59a-fece-42fd-8aa5-588621caf314
relation.isAuthorOfPublication.latestForDiscovery7488b59a-fece-42fd-8aa5-588621caf314
sigepi.autor.atividadeCAVALCANTE, F.H.C.:3083:-1:Spt_BR
sigepi.autor.atividadeCARBONARI, A.W.:1437:310:Npt_BR

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