Computer modeling of the crystallographic structure and defects formation in the Li2WO4, La2(WO4)3 and LiLa(WO4)2

dc.contributor.authorMORAES, JAIR R. dept_BR
dc.contributor.authorBALDOCHI, SONIA L.pt_BR
dc.contributor.authorAMARAL, JOMAR B.pt_BR
dc.contributor.authorVALERIO, MARIO E.G.pt_BR
dc.coverageNacionalpt_BR
dc.creator.eventoENCONTRO NACIONAL DE FISICA DA MATERIA CONDENSADA, 33.pt_BR
dc.date.accessioned2014-11-19T11:34:19Zpt_BR
dc.date.accessioned2014-11-19T14:08:05Zpt_BR
dc.date.accessioned2015-04-01T12:42:06Z
dc.date.available2014-11-19T11:34:19Zpt_BR
dc.date.available2014-11-19T14:08:05Zpt_BR
dc.date.available2015-04-01T12:42:06Z
dc.date.evento10-14 de maio, 2010pt_BR
dc.description.abstractIn the last decade, the alkali rare earth double tungstates ALn(WO4)2 (A=Li, Na, K and Ln = La-Lu ) have been intensively investigated concerning their optical properties as laser hosts. Specially, the ones showing tetragonal scheelite-like structure are interesting as solid state laser hosts because of their disordered structure leads to the broadening of the absorption and emission bands. This behavior improves the diode pumping power efficiency in the laser operation as well as the possibility to have a tunable laser system. These materials doped with Nd3+ ions are good candidates for laser hosts in the near-infrared range. In particular, the LiLa(WO4)2 (LLW) compound melt in relatively low temperature and do not show polymorphic transitions upon cooling allowing the growth from the melt. Regarding the low-cost investigation of these materials the computer modeling is a useful technique for determination of the defect properties of materials and the location of dopant ions to optimize the experimental conditions to obtain single crystals for optical applications. Computer modeling methods, based on energy minimization and the Mott-Littleton approach, with interactions represented by interatomic potentials, have been used for determination of the defect properties of materials and the location of dopant ions. Such calculations enable predictions to be made of the sites occupied by dopants, and the form of charge compensation adopted, if needed. The formation energies and solution energies were then calculated for the extrinsic defects (Ln3+ doping), via solid state reactions just for the LLW matrix. The formation energies are also used in a set of equations that can predict the effect of solubility and concentration of dopants in this matrix. These theoretical results are being compared with experimental data for validating this investigation. This work is partially supported by FAPESP, CNPq and CAPES.
dc.identifier.citationMORAES, JAIR R. de; BALDOCHI, SONIA L.; AMARAL, JOMAR B.; VALERIO, MARIO E.G. Computer modeling of the crystallographic structure and defects formation in the Li2WO4, La2(WO4)3 and LiLa(WO4)2. In: ENCONTRO NACIONAL DE FISICA DA MATERIA CONDENSADA, 33., 10-14 de maio, 2010, Aguas de Lindoia, SP. <b>Resumos...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/21202.
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/21202pt_BR
dc.local.eventoAguas de Lindoia, SPpt_BR
dc.rightsopenAccesspt_BR
dc.subjecttungstatespt_BR
dc.subjectdefectspt_BR
dc.subjectoptical propertiespt_BR
dc.subjectsolid state laserspt_BR
dc.subjectcomputer calculationspt_BR
dc.titleComputer modeling of the crystallographic structure and defects formation in the Li2WO4, La2(WO4)3 and LiLa(WO4)2pt_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorSONIA LICIA BALDOCHI
ipen.autorJAIR RICARDO DE MORAES
ipen.codigoautor702
ipen.codigoautor4097
ipen.contributor.ipenauthorSONIA LICIA BALDOCHI
ipen.contributor.ipenauthorJAIR RICARDO DE MORAES
ipen.date.recebimento10-12pt_BR
ipen.event.datapadronizada2010pt_BR
ipen.identifier.ipendoc15994pt_BR
ipen.notas.internasResumospt_BR
ipen.type.genreResumo
relation.isAuthorOfPublication26be5272-a288-44a9-bc6c-7d52881cf9fc
relation.isAuthorOfPublication491c0116-50cc-4f6a-8cc4-6d7f9b434c9a
relation.isAuthorOfPublication.latestForDiscovery491c0116-50cc-4f6a-8cc4-6d7f9b434c9a
sigepi.autor.atividadeMORAES, JAIR R. DE:4097:910:Spt_BR
sigepi.autor.atividadeBALDOCHI, SONIA L.:702:910:Npt_BR

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