Evaluation of carbon thin films using raman spectroscopy

dc.contributor.authorSILVA, DANILO L.C. e
dc.contributor.authorKASSAB, LUCIANA R.P.
dc.contributor.authorSANTOS, ANTONIO D. dos
dc.contributor.authorPILLIS, MARINA F.
dc.coverageInternacionalpt_BR
dc.date.accessioned2018-12-10T15:10:32Z
dc.date.available2018-12-10T15:10:32Z
dc.date.issued2018pt_BR
dc.description.abstractCarbon thin films deposited by the magnetron sputtering technique were evaluated by Raman spectroscopy to study the influence on their crystallinity caused by different parameters like the carbon deposition time, the different buffer-layers and substrates employed and also two distinct heat treatments. The present results showed that the choice of these parameters plays an important role in the production of these films. The results also indicate the possibility of using the technique for the production of carbon thin films to be employed in future in applications with controlled content of structural defects, predominance of ordered sp2 bondings and tendency of graphitization.pt_BR
dc.identifier.citationSILVA, DANILO L.C. e; KASSAB, LUCIANA R.P.; SANTOS, ANTONIO D. dos; PILLIS, MARINA F. Evaluation of carbon thin films using raman spectroscopy. <b>Materials Research</b>, v. 21, n. 4, 2018. DOI: <a href="https://dx.doi.org/10.1590/1980-5373-MR-2017-0787">10.1590/1980-5373-MR-2017-0787</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/29346.
dc.identifier.doi10.1590/1980-5373-MR-2017-0787pt_BR
dc.identifier.fasciculo4pt_BR
dc.identifier.issn1516-1439pt_BR
dc.identifier.orcidaguardandopt_BR
dc.identifier.percentilfi16.89pt_BR
dc.identifier.percentilfiCiteScore47.75
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/29346
dc.identifier.vol21pt_BR
dc.relation.ispartofMaterials Researchpt_BR
dc.rightsopenAccesspt_BR
dc.subjectthin films
dc.subjectsputtering
dc.subjectgraphite
dc.subjectraman spectroscopy
dc.subjectcarbon
dc.subjectmagnetrons
dc.titleEvaluation of carbon thin films using raman spectroscopypt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorANTôNIO DOMINGUES DOS SANTOS
ipen.autorDANILO LOPES COSTA E SILVA
ipen.codigoautor7630
ipen.codigoautor11397
ipen.contributor.ipenauthorANTôNIO DOMINGUES DOS SANTOS
ipen.contributor.ipenauthorDANILO LOPES COSTA E SILVA
ipen.date.recebimento18-12pt_BR
ipen.identifier.fi1.104pt_BR
ipen.identifier.fiCiteScore2.0
ipen.identifier.ipendoc25139pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi0.001 - 1.499
ipen.range.percentilfi0.00 - 24.99
ipen.type.genreArtigo
relation.isAuthorOfPublication31402431-edff-42f1-ab9e-34418e3cddcd
relation.isAuthorOfPublicationf9b5b523-90c6-49de-ba0a-2bee04097634
relation.isAuthorOfPublication.latestForDiscoveryf9b5b523-90c6-49de-ba0a-2bee04097634
sigepi.autor.atividadeSILVA, DANILO L.C. E:11397:720:Spt_BR
sigepi.autor.atividadeSANTOS, ANTONIO D. DOS:7630:-1:Npt_BR

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