Development of a pulsed laser deposition system suitable for radioactive thin films growth

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dc.contributor.authorMACHADO, N.G.P.
dc.contributor.authorGENEZINI, F.A.
dc.contributor.authorRAELE, M.P.
dc.coverageNacional
dc.date.accessioned2024-04-15T13:43:18Z
dc.date.available2024-04-15T13:43:18Z
dc.date.issued2024
dc.description.abstractRadioactive thin films have a direct application in the development of beta-voltaic batteries. The main advantage of that kind of nuclear battery is its durability, which can range from a hundred years, depending on the half-life of the radioisotope used. In this context, Pulsed Laser Deposition (PLD) is an important tool. A relevant aspect of a system using this technique is that the main equipment is outside the chamber where the material is processed. Consequently, this feature allows the growth of radioactive thin films, as it enables the development of an arrangement where the contaminated area is controlled. In this way, the present work proposed the development of a PLD system for the growth of radioactive thin films. The PLD system was then implemented and radioactive copper targets were processed for 60 min and 120 min, resulting in radioactive thin films with an average thickness of (167.8 ± 3.7) nm and (313.5 ± 9.2) nm, respectively. Then, a study was performed about the radioactive contamination spread in the PLD system in order to prove if the filtering implemented was effective in retaining the contamination inside the vacuum chamber. Thus, it is demonstrated for the first time the feasibility of using the PLD technique in the growth of radioactive thin films, making its use possible in future studies on the development of beta-voltaic nuclear batteries.
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipIDCNPq: INFO 465763/2014-6; Sisfóton 440228/2021-2
dc.format.extent1-20
dc.identifier.citationMACHADO, N.G.P.; GENEZINI, F.A.; RAELE, M.P. Development of a pulsed laser deposition system suitable for radioactive thin films growth. <b>Brazilian Journal of Radiation Sciences</b>, v. 12, n. 1, p. 1-20, 2024. DOI: <a href="https://dx.doi.org/10.15392/2319-0612.2024.2331">10.15392/2319-0612.2024.2331</a>. Disponível em: https://repositorio.ipen.br/handle/123456789/48042.
dc.identifier.doi10.15392/2319-0612.2024.2331
dc.identifier.fasciculo1
dc.identifier.issn2319-0612
dc.identifier.orcidhttps://orcid.org/0000-0002-6318-6805
dc.identifier.orcidhttps://orcid.org/0000-0002-6461-6766
dc.identifier.percentilfiSem Percentil F.I.
dc.identifier.percentilfiCiteScoreSem Percentil CiteScore
dc.identifier.urihttps://repositorio.ipen.br/handle/123456789/48042
dc.identifier.vol12
dc.relation.ispartofBrazilian Journal of Radiation Sciences
dc.rightsopenAccess
dc.subjectthin films
dc.subjectbetavoltaic cells
dc.subjectradioisotope batteries
dc.subjectlasers
dc.subjectablation
dc.subjectpulsed irradiation
dc.subjectdeposition
dc.titleDevelopment of a pulsed laser deposition system suitable for radioactive thin films growth
dc.title.alternativeDesenvolvimento de um sistema de deposição por laser pulsado para o crescimento de filmes finos radioativos
dc.typeArtigo de periódico
dspace.entity.typePublication
ipen.autorNOE GABRIEL PINHEIRO MACHADO
ipen.autorFREDERICO ANTONIO GENEZINI
ipen.autorMARCUS PAULO RAELE
ipen.codigoautor14630
ipen.codigoautor2045
ipen.codigoautor3272
ipen.contributor.ipenauthorNOE GABRIEL PINHEIRO MACHADO
ipen.contributor.ipenauthorFREDERICO ANTONIO GENEZINI
ipen.contributor.ipenauthorMARCUS PAULO RAELE
ipen.identifier.fiSem F.I.
ipen.identifier.fiCiteScoreSem CiteScore
ipen.identifier.ipendoc30367
ipen.type.genreArtigo
relation.isAuthorOfPublication02613432-94e8-44bb-88da-4b6feb5b944a
relation.isAuthorOfPublication0c41d307-45a9-47c4-8281-5aa9ed46e6a4
relation.isAuthorOfPublicationd6670c99-6533-4da0-b054-4a459258a12f
relation.isAuthorOfPublication.latestForDiscovery02613432-94e8-44bb-88da-4b6feb5b944a
sigepi.autor.atividadeNOE GABRIEL PINHEIRO MACHADO:14630:920:S
sigepi.autor.atividadeFREDERICO ANTONIO GENEZINI:2045:310:N
sigepi.autor.atividadeMARCUS PAULO RAELE:3272:920:N
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