Verification of angular dependence in MOSFET detector

dc.contributor.authorSOUZA, C.H.pt_BR
dc.contributor.authorSHORTO, J.M.B.pt_BR
dc.contributor.authorSIQUEIRA, P.T.D.pt_BR
dc.contributor.authorNUNES, M.G.pt_BR
dc.contributor.authorSILVA JUNIOR, I.A.pt_BR
dc.contributor.authorYORIYAZ, H.pt_BR
dc.coverageNacionalpt_BR
dc.date.accessioned2019-08-09T11:25:36Z
dc.date.available2019-08-09T11:25:36Z
dc.date.issued2019pt_BR
dc.description.abstractIn vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of meas-urement, as well as easy handling. Nevertheless, its true differential is to allow reading of dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in the patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Exper-imental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (±1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.pt_BR
dc.format.extent1-11pt_BR
dc.identifier.citationSOUZA, C.H.; SHORTO, J.M.B.; SIQUEIRA, P.T.D.; NUNES, M.G.; SILVA JUNIOR, I.A.; YORIYAZ, H. Verification of angular dependence in MOSFET detector. <b>Brazilian Journal of Radiation Sciences</b>, v. 7, n. 2A, p. 1-11, 2019. DOI: <a href="https://dx.doi.org/10.15392/bjrs.v7i2A.734">10.15392/bjrs.v7i2A.734</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/30053.
dc.identifier.doi10.15392/bjrs.v7i2A.734pt_BR
dc.identifier.fasciculo2Apt_BR
dc.identifier.issn2319-0612pt_BR
dc.identifier.orcid0000-0003-4023-236Xpt_BR
dc.identifier.orcid0000-0001-9475-8266pt_BR
dc.identifier.orcid0000-0001-9886-4795pt_BR
dc.identifier.orcid0000-0003-2281-5756pt_BR
dc.identifier.orcid0000-0003-4817-5275pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0003-4023-236X
dc.identifier.orcidhttps://orcid.org/0000-0003-4817-5275
dc.identifier.percentilfiSem Percentilpt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30053
dc.identifier.vol7pt_BR
dc.relation.ispartofBrazilian Journal of Radiation Sciencespt_BR
dc.rightsopenAccesspt_BR
dc.sourceThe Meeting on Nuclear Applications (ENAN), 13th, 22-27 de outubro, 2017, Belo Horizonte, MGpt_BR
dc.subjectmosfet
dc.subjectexperimental data
dc.subjectdosemeters
dc.subjectdosimetry
dc.subjectin vivo
dc.subjectperformance
dc.subjectcesium 137
dc.subjectcobalt 60
dc.subjectirradiation
dc.subjectneoplasms
dc.titleVerification of angular dependence in MOSFET detectorpt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorMAIRA GOES NUNES
ipen.autorHELIO YORIYAZ
ipen.autorIREMAR ALVES DA SILVA JÚNIOR
ipen.autorPAULO DE TARSO DALLEDONE SIQUEIRA
ipen.autorJULIAN MARCO BARBOSA SHORTO
ipen.autorCLAYTON HENRIQUE DE SOUZA
ipen.codigoautor3897
ipen.codigoautor80
ipen.codigoautor7719
ipen.codigoautor968
ipen.codigoautor9690
ipen.codigoautor14358
ipen.contributor.ipenauthorMAIRA GOES NUNES
ipen.contributor.ipenauthorHELIO YORIYAZ
ipen.contributor.ipenauthorIREMAR ALVES DA SILVA JÚNIOR
ipen.contributor.ipenauthorPAULO DE TARSO DALLEDONE SIQUEIRA
ipen.contributor.ipenauthorJULIAN MARCO BARBOSA SHORTO
ipen.contributor.ipenauthorCLAYTON HENRIQUE DE SOUZA
ipen.date.recebimento19-08
ipen.identifier.fiSem F.I.pt_BR
ipen.identifier.ipendoc25846pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublication384beabb-178e-473f-957c-e699b3f15af7
relation.isAuthorOfPublication93102dac-f89d-4743-b6ea-5158708cbb92
relation.isAuthorOfPublication67010d40-4537-480f-bdea-16933cb99afb
relation.isAuthorOfPublication24db5afe-fc9a-4cc0-9be3-2c5035796315
relation.isAuthorOfPublication91a9cbb6-cd24-480c-a65d-dd1c309a1622
relation.isAuthorOfPublicationd1ebcd6c-9e77-487f-8726-f6c5a24de738
relation.isAuthorOfPublication.latestForDiscoveryd1ebcd6c-9e77-487f-8726-f6c5a24de738
sigepi.autor.atividadeYORIYAZ, H.:80:420:Npt_BR
sigepi.autor.atividadeSILVA JUNIOR, I.A.:7719:330:Npt_BR
sigepi.autor.atividadeNUNES, M.G.:3897:420:Npt_BR
sigepi.autor.atividadeSIQUEIRA, P.T.D.:968:420:Npt_BR
sigepi.autor.atividadeSHORTO, J.M.B.:9690:420:Npt_BR
sigepi.autor.atividadeSOUZA, C.H.:14358:420:Spt_BR

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