Synchrotron light source X-ray detection with LowGain Avalanche Diodes
Carregando...
Data
Data de publicação
Autores IPEN
Orientador
Título da Revista
ISSN da Revista
Título do Volume
É parte de
É parte de
É parte de
Journal of Instrumentation
Exportar
Resumo
Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future Timing Detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent time resolution (tens of picoseconds). Using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 70 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2 ns intervals with an energy dispersion (Delta E/ E) of 10(-4). LGADs from Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 mu m to 50 mu m and different gain layer designs were read out using fast amplification boards and digitized with a high bandwidth and high sampling rate oscilloscope. PIN devices from HPK and AC-LGADs from BNL were characterized as well. A systematic and detailed characterization of the devices' energy linearity, resolution, and time resolution as a function of X-ray energy was performed for different biasing voltages at room temperature and are reported in this work. The charge collection and multiplication mechanism were simulated using Geant4 and TCAD Sentaurus, providing an important handle for interpreting the data.
Como referenciar
MAZZA, S.M.; SAITO, G.; ZHAO, Y.; KIRKES, T.; YOHO, N.; YERDEA, D.; NAGEL, N.; OTT, J.; NIZAM, M.; LEITE, M.; MORALLES, M.; SADROZINSKI, H.F.-W.; SEIDEN, A.; SCHUMM B.; MCKINNEY-MARTINEZ, F.; GIACOMINI, G.; CHEN, W. Synchrotron light source X-ray detection with LowGain Avalanche Diodes. Journal of Instrumentation, v. 18, n. 10, p. 1-18, 2023. DOI: 10.1088/1748-0221/18/10/P10006. Disponível em: https://repositorio.ipen.br/handle/123456789/47880. Acesso em: 20 Mar 2026.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.