RODRIGO TEIXEIRA BENTO

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  • Artigo IPEN-doc 24951
    Morphological characterization of N-doped TiO2 thin films
    2017 - OLIVEIRA, EDUARDO C. de; SZURKALO, MARGARIDA; CORREA, OLANDIR V.; BENTO, RODRIGO T.; PILLIS, MARINA F.
    Metallorganic chemical vapor deposition was used to grown TiO2 and N-doped TiO2 on borosilicate substrates at 400°C. Titanium isopropoxide IV was used as titanium and oxygen precursors and ammonia as nitrogen source. Analyses by atomic force microscopy showed that both films presented rounded well-defined grains. The results showed that nitrogen doping resulted in a decrease in the mean grain size and in the surface roughness.