JULIO BATISTA RODRIGUES DA SILVA
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Artigo IPEN-doc 23998 Influence of impurities on the radiation response of the TlBr semiconductor crystal2017 - SANTOS, ROBINSON A. dos; MESQUITA, CARLOS H. de; SILVA, JULIO B.R. da; FERRAZ, CAUE de M.; COSTA, FABIO E. da; MARTINS, JOAO F.T.; GENNARI, ROSELI F.; HAMADA, MARGARIDA M.Two commercially available TlBr salts were used as the rawmaterial for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgmanmethod. Thepurification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals. The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity.Artigo IPEN-doc 22529 Multi-elemental segregation analysis of thallium bromide impurities purified by the repeated bridgman technique2012 - SANTOS, ROBINSON A. dos; SILVA, JULIO B.R. da; GENNARI, ROSELI F.; MARTINS, JOAO F.T.; FERRAZ, CAUE de M.; HAMADA, MARGARIDA M.; MESQUITA, CARLOS H. deArtigo IPEN-doc 19405 Influence of impurities on the surface morphology of the TlBr crystal semiconductor2013 - SANTOS, ROBINSON A. dos; SILVA, JULIO B.R. da; MARTINS, JOAO F.T.; FERRAZ, CAUE de M.; COSTA, FABIO E. da; GENNARI, ROSELI F.; MESQUITA, CARLOS H. de; HAMADA, MARGARIDA M.