Growth of YLF:Yb:Tm:Nd for optical applications

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dc.contributor.authorRANIERI, I.M.pt_BR
dc.contributor.authorCOURROL, L.C.pt_BR
dc.contributor.authorCARVALHO, A.F.pt_BR
dc.contributor.authorGOMES, L.pt_BR
dc.contributor.authorBALDOCHI, S.L.pt_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2014-07-15T13:45:24Zpt_BR
dc.date.accessioned2014-07-30T11:51:22Z
dc.date.available2014-07-15T13:45:24Zpt_BR
dc.date.available2014-07-30T11:51:22Z
dc.date.issued2007pt_BR
dc.description.abstractThe focus of this study is the behavior of Tm, Yb and Nd ions in the LiYF4 (YLF) crystal. One YLF crystal was successfully grown by the Czochralski method; it was doped with 20 mol% Yb, 1.3 mol% Nd and 0.05 mol% Tm. The segregation coefficients of the dopants and lattice parameters were determined. The spectroscopic properties of samples with different amounts of Nd were obtained from absorption and emission studies.
dc.format.extent2309-2313pt_BR
dc.identifier.citationRANIERI, I.M.; COURROL, L.C.; CARVALHO, A.F.; GOMES, L.; BALDOCHI, S.L. Growth of YLF:Yb:Tm:Nd for optical applications. <b>Journal of Materials Science</b>, v. 42, p. 2309-2313, 2007. DOI: <a href="https://dx.doi.org/10.1007/s10853-006-0991-x">10.1007/s10853-006-0991-x</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/5194.
dc.identifier.doi10.1007/s10853-006-0991-x
dc.identifier.issn0022-2461pt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/5194pt_BR
dc.identifier.vol42pt_BR
dc.relation.ispartofJournal of Materials Sciencept_BR
dc.rightsopenAccessen
dc.subjectcrystalspt_BR
dc.subjectglasspt_BR
dc.subjectdoped materialspt_BR
dc.subjectrare earthspt_BR
dc.subjectyttrium fluoridespt_BR
dc.subjectlithium fluoridespt_BR
dc.subjectczochralski methodpt_BR
dc.subjectoptical propertiespt_BR
dc.subjectlaserspt_BR
dc.titleGrowth of YLF:Yb:Tm:Nd for optical applicationspt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorLAERCIO GOMES
ipen.autorSONIA LICIA BALDOCHI
ipen.autorADRIANA FERREIRA DE CARVALHO
ipen.autorIZILDA MARCIA RANIERI
ipen.codigoautor1190
ipen.codigoautor702
ipen.codigoautor3719
ipen.codigoautor1445
ipen.contributor.ipenauthorLAERCIO GOMES
ipen.contributor.ipenauthorSONIA LICIA BALDOCHI
ipen.contributor.ipenauthorADRIANA FERREIRA DE CARVALHO
ipen.contributor.ipenauthorIZILDA MARCIA RANIERI
ipen.date.recebimento08-03pt_BR
ipen.identifier.fi1.081pt_BR
ipen.identifier.ipendoc12297pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi0.001 - 1.499
ipen.type.genreArtigo
relation.isAuthorOfPublication3682a9c8-52ea-4835-9e74-0f623e302d62
relation.isAuthorOfPublication26be5272-a288-44a9-bc6c-7d52881cf9fc
relation.isAuthorOfPublication7509b46c-7681-4fbe-a62f-b6484bb84b72
relation.isAuthorOfPublication3cc14224-e510-456f-afb1-82002c20ac7a
relation.isAuthorOfPublication.latestForDiscovery3cc14224-e510-456f-afb1-82002c20ac7a
sigepi.autor.atividadeRANIERI, I.M.:1445:29:Spt_BR
sigepi.autor.atividadeCARVALHO, A.F.:3719:-1:Npt_BR
sigepi.autor.atividadeGOMES, L.:1190:29:Npt_BR
sigepi.autor.atividadeBALDOCHI, S.L.:702:29:Npt_BR

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