Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
| dc.contributor.author | NARDES, A.M. | pt_BR |
| dc.contributor.author | ANDRADE, A.M. | pt_BR |
| dc.contributor.author | FONSECA, F.J. | pt_BR |
| dc.contributor.author | DIRANI, E.A.T. | pt_BR |
| dc.contributor.author | MUCCILLO, R. | pt_BR |
| dc.contributor.author | MUCCILLO, E.N.S. | pt_BR |
| dc.coverage | Internacional | pt_BR |
| dc.date.accessioned | 2014-07-31T11:33:24Z | pt_BR |
| dc.date.accessioned | 2014-07-31T11:52:42Z | |
| dc.date.available | 2014-07-31T11:33:24Z | pt_BR |
| dc.date.available | 2014-07-31T11:52:42Z | |
| dc.date.issued | 2003 | pt_BR |
| dc.format.extent | 407-411 | pt_BR |
| dc.identifier.citation | NARDES, A.M.; ANDRADE, A.M.; FONSECA, F.J.; DIRANI, E.A.T.; MUCCILLO, R.; MUCCILLO, E.N.S. Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films. <b>Journal of Materials Science: Materials in Electronics</b>, v. 14, n. 5/7, p. 407-411, 2003. Disponível em: http://repositorio.ipen.br/handle/123456789/7494. | |
| dc.identifier.fasciculo | 5/7 | pt_BR |
| dc.identifier.issn | 0957-4522 | pt_BR |
| dc.identifier.orcid | https://orcid.org/0000-0001-9219-388X | |
| dc.identifier.orcid | https://orcid.org/0000-0002-8598-279X | |
| dc.identifier.uri | http://repositorio.ipen.br/handle/123456789/7494 | pt_BR |
| dc.identifier.vol | 14 | pt_BR |
| dc.relation.ispartof | Journal of Materials Science: Materials in Electronics | pt_BR |
| dc.rights | openAccess | en |
| dc.source | Apresentado em: INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th, June 10-12, 2002, Espoo, Finland | pt_BR |
| dc.subject | silicon | pt_BR |
| dc.subject | thin films | pt_BR |
| dc.subject | chemical vapor deposition | pt_BR |
| dc.subject | plasma | pt_BR |
| dc.subject | temperature range 0273-0400 k | pt_BR |
| dc.subject | temperature range 0400-1000 k | pt_BR |
| dc.subject | electric conductivity | pt_BR |
| dc.subject | structural chemical analysis | pt_BR |
| dc.subject | hall effect | pt_BR |
| dc.subject | impedance | |
| dc.subject | spectroscopy | |
| dc.title | Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films | pt_BR |
| dc.type | Artigo de periódico | pt_BR |
| dspace.entity.type | Publication | |
| ipen.autor | ELIANA NAVARRO DOS SANTOS MUCCILLO | |
| ipen.autor | REGINALDO MUCCILLO | |
| ipen.autor | ARIANE MAINETTI DE ANDRADE | |
| ipen.codigoautor | 1298 | |
| ipen.codigoautor | 1165 | |
| ipen.codigoautor | 2982 | |
| ipen.contributor.ipenauthor | ELIANA NAVARRO DOS SANTOS MUCCILLO | |
| ipen.contributor.ipenauthor | REGINALDO MUCCILLO | |
| ipen.contributor.ipenauthor | ARIANE MAINETTI DE ANDRADE | |
| ipen.date.recebimento | 04-08 | pt_BR |
| ipen.identifier.fi | 0.635 | pt_BR |
| ipen.identifier.ipendoc | 09768 | pt_BR |
| ipen.identifier.iwos | WoS | pt_BR |
| ipen.range.fi | 0.001 - 1.499 | |
| ipen.type.genre | Artigo | |
| relation.isAuthorOfPublication | bc09f7ae-f25e-4f60-87a3-0c89989e8304 | |
| relation.isAuthorOfPublication | 97e4b17d-7782-42dc-a38c-60d9b37440a4 | |
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| relation.isAuthorOfPublication.latestForDiscovery | 4e200f70-0ab1-4f19-83d1-aa675cdc18ff | |
| sigepi.autor.atividade | NARDES, A.M.:-1:-1:S | pt_BR |
| sigepi.autor.atividade | pt_BR | |
| sigepi.autor.atividade | ANDRADE, A.M.:2982:-1:N | pt_BR |
| sigepi.autor.atividade | FONSECA, F.J.:-1:-1:N | pt_BR |
| sigepi.autor.atividade | pt_BR | |
| sigepi.autor.atividade | pt_BR | |
| sigepi.autor.atividade | DIRANI, E.A.T.:-1:-1:N | pt_BR |
| sigepi.autor.atividade | MUCCILLO, R.:1165:34:N | pt_BR |
| sigepi.autor.atividade | MUCCILLO, E.N.S.:1298:34:N | pt_BR |
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