Low-temperature reduction of graphene oxide using the HDDR process for electrochemical supercapacitor applications
| dc.contributor.author | BENITEZ JARA, F.G. | |
| dc.contributor.author | CRUZ, P.V. | |
| dc.contributor.author | BARBOSA, L.P. | |
| dc.contributor.author | CASINI, J.C.S. | |
| dc.contributor.author | PERUZZI, A.J. | |
| dc.contributor.author | SAKATA, S.K. | |
| dc.contributor.author | FARIA, R.N. | |
| dc.coverage | Nacional | pt_BR |
| dc.creator.evento | CONGRESSO BRASILEIRO DE ENGENHARIA E CIÊNCIA DOS MATERIAIS, 23. | pt_BR |
| dc.date.accessioned | 2019-02-18T18:47:15Z | |
| dc.date.available | 2019-02-18T18:47:15Z | |
| dc.date.evento | 04-08 de novembro, 2018 | pt_BR |
| dc.description.abstract | In the present work, attempts of reducing a graphene oxide powder using a low temperature hydrogenation disproportionation desorption and recombination process (L-HDDR) has been carried out. A lower processing temperature in large scale production is significant as far as costs are concerned. Graphite oxide was prepared using a modified Hummers’ method and dispersed in ethanol, exfoliated using ultrasonication to produce Graphene Oxide (GO). Investigations have been carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experimental results of L-HDDR processing graphene oxide powder using unmixed hydrogen at 400°C and relatively low pressures (<2 bars) have been reported. X-ray diffraction patterns showed a reduction of graphene oxide with the L-HDDR process. The results showed that the L-HDDR process, as the standard HDDR process, can be applied to the reduction of graphene oxide to produce supercapacitor materials. The advantage of employing the L-HDDR process is a relatively a low temperature would reduce the cost of treatment that is a very important factor for producing large amount of material. Thus, the L-HDDR process has been considered a promising alternative method of reducing graphene oxide with efficiency and possibly in large scale production. | pt_BR |
| dc.event.sigla | CBECiMat | pt_BR |
| dc.format.extent | 2922-2922 | pt_BR |
| dc.identifier.citation | BENITEZ JARA, F.G.; CRUZ, P.V.; BARBOSA, L.P.; CASINI, J.C.S.; PERUZZI, A.J.; SAKATA, S.K.; FARIA, R.N. Low-temperature reduction of graphene oxide using the HDDR process for electrochemical supercapacitor applications. In: CONGRESSO BRASILEIRO DE ENGENHARIA E CIÊNCIA DOS MATERIAIS, 23., 04-08 de novembro, 2018, Foz do Iguaçu, PR. <b>Resumo...</b> p. 2922-2922. Disponível em: http://repositorio.ipen.br/handle/123456789/29627. | |
| dc.identifier.orcid | aguardando | pt_BR |
| dc.identifier.orcid | https://orcid.org/0000-0001-6072-5853 | |
| dc.identifier.uri | http://repositorio.ipen.br/handle/123456789/29627 | |
| dc.local.evento | Foz do Iguaçu, PR | pt_BR |
| dc.rights | openAccess | pt_BR |
| dc.title | Low-temperature reduction of graphene oxide using the HDDR process for electrochemical supercapacitor applications | pt_BR |
| dc.type | Resumo de eventos científicos | pt_BR |
| dspace.entity.type | Publication | |
| ipen.autor | PEDRO VITOR DUARTE DA CRUZ | |
| ipen.autor | RUBENS NUNES DE FARIA JUNIOR | |
| ipen.autor | SOLANGE KAZUMI SAKATA | |
| ipen.autor | FERNANDO GABRIEL BENITEZ JARA | |
| ipen.codigoautor | 14298 | |
| ipen.codigoautor | 227 | |
| ipen.codigoautor | 7038 | |
| ipen.codigoautor | 14421 | |
| ipen.contributor.ipenauthor | PEDRO VITOR DUARTE DA CRUZ | |
| ipen.contributor.ipenauthor | RUBENS NUNES DE FARIA JUNIOR | |
| ipen.contributor.ipenauthor | SOLANGE KAZUMI SAKATA | |
| ipen.contributor.ipenauthor | FERNANDO GABRIEL BENITEZ JARA | |
| ipen.date.recebimento | 19-02 | pt_BR |
| ipen.event.datapadronizada | 2018 | pt_BR |
| ipen.identifier.ipendoc | 25388 | pt_BR |
| ipen.notas.internas | Resumo | pt_BR |
| ipen.type.genre | Resumo | |
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| relation.isAuthorOfPublication | 20cb7788-3957-4550-9e5c-cf7f5261eec4 | |
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| sigepi.autor.atividade | BENITEZ JARA, F.G.:14421:730:S | pt_BR |
| sigepi.autor.atividade | CRUZ, P.V.:14298:730:N | pt_BR |
| sigepi.autor.atividade | SAKATA, S.K.:7038:220:N | pt_BR |
| sigepi.autor.atividade | FARIA, R.N.:227:730:N | pt_BR |