Influence of impurities on the radiation response of the TlBr semiconductor crystal

Página do item simplificado
dc.contributor.authorSANTOS, ROBINSON A. dos
dc.contributor.authorMESQUITA, CARLOS H. de
dc.contributor.authorSILVA, JULIO B.R. da
dc.contributor.authorFERRAZ, CAUE de M.
dc.contributor.authorCOSTA, FABIO E. da
dc.contributor.authorMARTINS, JOAO F.T.
dc.contributor.authorGENNARI, ROSELI F.
dc.contributor.authorHAMADA, MARGARIDA M.
dc.coverageInternacionalpt_BR
dc.date.accessioned2017-04-12T12:01:49Z
dc.date.available2017-04-12T12:01:49Z
dc.date.issued2017pt_BR
dc.description.abstractTwo commercially available TlBr salts were used as the rawmaterial for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgmanmethod. Thepurification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals. The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity.pt_BR
dc.format.extent1-10pt_BR
dc.identifier.citationSANTOS, ROBINSON A. dos; MESQUITA, CARLOS H. de; SILVA, JULIO B.R. da; FERRAZ, CAUE de M.; COSTA, FABIO E. da; MARTINS, JOAO F.T.; GENNARI, ROSELI F.; HAMADA, MARGARIDA M. Influence of impurities on the radiation response of the TlBr semiconductor crystal. <b>Advances in Materials Science and Engineering</b>, v. 2017, n. 1750517, p. 1-10, 2017. DOI: <a href="https://dx.doi.org/10.1155/2017/1750517">10.1155/2017/1750517</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/27387.
dc.identifier.doi10.1155/2017/1750517pt_BR
dc.identifier.fasciculo1750517pt_BR
dc.identifier.issn1687-8434pt_BR
dc.identifier.percentilfi31.05en
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/27387
dc.identifier.vol2017pt_BR
dc.relation.ispartofAdvances in Materials Science and Engineeringpt_BR
dc.rightsopenAccesspt_BR
dc.subjectbridgman method
dc.subjectcrystals
dc.subjectgamma radiation
dc.subjectimpurities
dc.subjectmorphology
dc.subjectpurification
dc.subjectscanning electron microscopy
dc.subjectsemiconductor detectors
dc.subjectstoichiometry
dc.subjectsurfaces
dc.subjectthallium bromides
dc.subjectx-ray diffraction
dc.titleInfluence of impurities on the radiation response of the TlBr semiconductor crystalpt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorJULIO BATISTA RODRIGUES DA SILVA
ipen.autorCAUE DE MELLO FERRAZ
ipen.autorJOAO FRANCISCO TRENCHER MARTINS
ipen.autorMARGARIDA MIZUE HAMADA
ipen.autorFABIO EDUARDO DA COSTA
ipen.autorCARLOS HENRIQUE DE MESQUITA
ipen.autorROBINSON ALVES DOS SANTOS
ipen.codigoautor10848
ipen.codigoautor10792
ipen.codigoautor5858
ipen.codigoautor1476
ipen.codigoautor384
ipen.codigoautor1149
ipen.codigoautor7515
ipen.contributor.ipenauthorJULIO BATISTA RODRIGUES DA SILVA
ipen.contributor.ipenauthorCAUE DE MELLO FERRAZ
ipen.contributor.ipenauthorJOAO FRANCISCO TRENCHER MARTINS
ipen.contributor.ipenauthorMARGARIDA MIZUE HAMADA
ipen.contributor.ipenauthorFABIO EDUARDO DA COSTA
ipen.contributor.ipenauthorCARLOS HENRIQUE DE MESQUITA
ipen.contributor.ipenauthorROBINSON ALVES DOS SANTOS
ipen.date.recebimento17-04pt_BR
ipen.identifier.fi1.372pt_BR
ipen.identifier.ipendoc23998pt_BR
ipen.range.fi0.001 - 1.499
ipen.range.percentilfi25.00 - 49.99
ipen.type.genreArtigo
relation.isAuthorOfPublicationb331a840-bda8-4c19-951b-937f2f7e2d83
relation.isAuthorOfPublication68301751-8b20-4f1b-be8f-ae9e920ecaea
relation.isAuthorOfPublicationf9b49851-75f2-4319-9bcc-105b9e4c2765
relation.isAuthorOfPublication74139eee-5dbd-4dfd-b672-89cb56c5cce5
relation.isAuthorOfPublicationa4796db3-7719-4922-bfbe-a1789ba6bd51
relation.isAuthorOfPublication20d22e5e-a0d1-4286-b4d9-20e5ac53cb51
relation.isAuthorOfPublication45bb3200-8c29-4749-b307-e25349039f26
relation.isAuthorOfPublication.latestForDiscovery45bb3200-8c29-4749-b307-e25349039f26
sigepi.autor.atividadeSANTOS, ROBINSON A. DOS:7515:240:Spt_BR
sigepi.autor.atividadeMESQUITA, CARLOS H. DE:1149:240:Npt_BR
sigepi.autor.atividadeSILVA, JULIO B.R. DA:10848:240:Npt_BR
sigepi.autor.atividadeFERRAZ, CAUE DE M.:10792:220:Npt_BR
sigepi.autor.atividadeCOSTA, FABIO E. DA:384:240:Npt_BR
sigepi.autor.atividadeMARTINS, JOAO F.T.:5858:240:Npt_BR
sigepi.autor.atividadeHAMADA, MARGARIDA M.:1476:240:Npt_BR
Pacote Original
Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
23998.pdf
Tamanho:
1.78 MB
Formato:
Adobe Portable Document Format
Descrição:
Baixar
Licença do Pacote
Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição:
Baixar
Coleções
Periódicos