Accumulated dose stability parameters in p-type and n-type silicon diodes
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Brazilian Journal of Radiation Sciences
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This work investigates the influence of doping type on the dose responses
and the accumulated dose stability of n- and p-type silicon MCz diodes. The operating
principle of diode-based dosimeters relies on measuring the radiation-induced currents
delivered by non-polarized diodes throughout the exposure time. An electrometer
promptly reads the current signal, linearly dose rate dependent. The offline integration
of the current signal provides the charge generated in the sensitive volume of the diode,
expected to be proportional to the absorbed dose. The experimental approach involves
analyzing the repeatability of the current signals, the dose responses of both pristine
and pre-irradiated diodes, the correspondent charge sensitivities, and the sensitivity
decay with increasing doses. For doses up to 175 kGy, the results reveal a linear dose
response of the MCz(p) diode, characterized by a charge sensitivity of 3.1 µC/Gy.
Within the same dose range, the response of the MCz(n) diode is visibly saturated and
given by a fourth-order polynomial function. This saturation effect is likely linked to
radiation damage effects manifesting in the current decay with increasing accumulated
doses. This surmise is confirmed in this work by a less pronounced drop in sensitivity
of the p-type diode than that recorded for the n-type diode when both are subjected to
175 kGy. This behavior is ascribed to the working principle of the diode in the short-circuit current mode and the differences between the diffusion lengths of minority
carriers in n- and p-type silicon materials. The diodes' response stability and dose
lifespan remain to be further investigated.
Como referenciar
PASCOALINO, K.; GONCALVES, J.A.C.; CAMARGO, F.; BUENO, C.C. Accumulated dose stability parameters in p-type and n-type silicon diodes. Brazilian Journal of Radiation Sciences, v. 12, n. 4A, p. 1-13, 2024. DOI: 10.15392/2319-0612.2024.2601. Disponível em: https://repositorio.ipen.br/handle/123456789/49080. Acesso em: 20 Jan 2026.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.